MRF6S19100HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S19100HR3 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S19100HR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S19100HR3** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S19100HR3
Manufacturer	Freescale Semiconductor
File Size	447.55 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S19100HR3_FreescaleSemiconductor.pdf
Additional preview pages of the MRF6S19100HR3 datasheet.

MRF6S19100HR3 Product details

Description

Part Number 2743019447 27271SL 100B150CP500X 100B5R6JP500X T491C105K050AS 100B430CP500X T491X226K035AS T491C106K035AS C1825C14J5RAC MCR50V107M8X11 CRCW120612R0F100 CRCW12062001F100 Manufacturer Fair - Rite Johanson Dielectrics ATC Kemet Kemet ATC Kemet Kemet Kemet Multicomp Vishay Vishay MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 3 C8 C9 B1 VGG www.datasheet4u.com R1 C12 R2 C5 C4 C7 C11 C10 + VDD - C1 C2 C3 C6 CUT OUT AREA MRF6S19100H/HS Rev 2 Freescale has

Features

PUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2.
Carrier N.
CDMA, 2.5 MHz Carrier Spacing, 1.

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Published: Jun 10, 2009 |