MRF6S19100NBR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S19100NBR1, RF Power Field Effect Transistors

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Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications.

Typical 2 - Carrier N - CDMA Performan

MRF6S19100NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* N Suffix Indicates Lead - Free Terminations

* Designed for Low