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NDS9953A Dual P-Channel MOSFET

NDS9953A Description

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDS9953A Features

* -2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________

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Dual P-Channel MOSFET Fairchild
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