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NDS9955 - Dual N-Channel MOSFET

Datasheet Summary

Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.

Features

  • 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 G2 7 8 4 3 2 1 S ND 55 99 S2 G1 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Cont.

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Datasheet Details

Part number NDS9955
Manufacturer Fairchild
File Size 196.46 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet NDS9955 Datasheet
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Full PDF Text Transcription

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May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON).
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