Datasheet4U Logo Datasheet4U.com

NDS9958 - Dual N&P-Channel MOSFET

Datasheet Summary

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V. P-Channel -3.5A , -20V, RDS(ON) = 0.1Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. _______________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage T A = 25°C.

📥 Download Datasheet

Datasheet preview – NDS9958

Datasheet Details

Part number NDS9958
Manufacturer Fairchild
File Size 360.87 KB
Description Dual N&P-Channel MOSFET
Datasheet download datasheet NDS9958 Datasheet
Additional preview pages of the NDS9958 datasheet.

📁 Similar Datasheet

  • NDS9959-NL - Dual N-Channel MOSFET (VBsemi)
  • NDS9948 - 60V Dual P-Channel MOSFET (ON Semiconductor)
  • NDS9948-NL - Dual P-Channel MOSFET (VBsemi)
  • NDS9405 - single P-Channel MOSFET (ETC)
  • NDS9407 - P-Channel MOSFET (ON Semiconductor)
  • NDS96P - 1M x 16 bit Synchronous DRAM (INSIGNIS)
  • NDS02ZG-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZB-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
Other Datasheets by Fairchild

Full PDF Text Transcription

Click to expand full text
February 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management, Half bridge motor control, cellular phone, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V.
Published: |