NDS9407 - P-Channel MOSFET

Datasheet Summary

Description

This P

advanced PowerTrench process.

20 V).

Features

3 A,.
60 V. RDS(ON) = 150 mW @ VGS =.
10 V RDS(ON) = 240 mW @ VGS =.
4.5 V.
Low Gate Charge.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
High Power and Current Handling Capability.
These Device is Pb.
Free and Halide Free.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NDS9407
Manufacturer	ON Semiconductor
File Size	235.67 KB
Description	P-Channel MOSFET
Datasheet	NDS9407 Datasheet
Additional preview pages of the NDS9407 datasheet.

📁 Similar Datasheet

NDS9407 - Single P-Channel MOSFET (Fairchild)
NDS9400A - Single P-Channel MOSFET (Fairchild)
NDS9405 - single P-Channel MOSFET (ETC)
NDS9410A - Single N-channel MOSFET (Fairchild)
NDS9410S - Single N-channel MOSFET (Fairchild)
NDS9430 - 30V P-Channel PowerTrench MOSFET (Fairchild)
NDS9430A - Single P-Channel MOSFET (Fairchild)
NDS9435A - 30V P-Channel MOSFET (Fairchild)
NDS96P - 1M x 16 bit Synchronous DRAM (INSIGNIS)
NDS9925A - Dual N-Channel MOSFET (Fairchild)

Other Datasheets by ON Semiconductor

NDS9948 - 60V Dual P-Channel MOSFET
NDS0610 - P-Channel Enhancement Mode Field Effect Transistor
NDS351AN - N-Channel MOSFET
NDS355AN - N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS7002A - N-Channel MOSFET
NDS8434 - Single P-Channel Enhancement Mode Field Effect Transistor
NDSH10120C-F155 - SiC Schottky Diode
NDSH10170A - SiC Schottky Diode

Full PDF Text Transcription

Click to expand full text

MOSFET – P-Channel, POWERTRENCH) 60 V NDS9407 General Description This P−Channel MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V – 20 V). Features • −3 A, −60 V. RDS(ON) = 150 mW @ VGS = −10 V RDS(ON) = 240 mW @ VGS = −4.

Published: Oct 12, 2024 |