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NDS9948 - 60V Dual P-Channel MOSFET

Datasheet Summary

Description

This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process.

20V).

Power management Load switch

Features

  • 2.3 A,.
  • 60 V RDS(ON) = 250 mΩ @ VGS =.
  • 10 V RDS(ON) = 500 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge (9nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage.

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Datasheet Details

Part number NDS9948
Manufacturer ON Semiconductor
File Size 207.35 KB
Description 60V Dual P-Channel MOSFET
Datasheet download datasheet NDS9948 Datasheet
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NDS9948 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Applications • Power management • Load switch • Battery protection Features • –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ VGS = –4.
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