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NDS9956A - Dual N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 3.7A, 30V. RDS(ON) = 0.08Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A= 25°C unless otherwise noted NDS9956A 30 ± 20.

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Datasheet Details

Part number NDS9956A
Manufacturer Fairchild
File Size 341.13 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet NDS9956A Datasheet
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Full PDF Text Transcription

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February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed. Features 3.7A, 30V. RDS(ON) = 0.08Ω @ VGS = 10V High density cell design for extremely low RDS(ON).
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