Datasheet Details
- Part number
- FDMS4435BZ
- Manufacturer
- Fairchild Semiconductor
- File Size
- 397.42 KB
- Datasheet
- FDMS4435BZ-FairchildSemiconductor.pdf
- Description
- MOSFET
FDMS4435BZ Description
FDMS4435BZ P-Channel Power Trench® MOSFET FDMS4435BZ P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ .
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-.
FDMS4435BZ Features
* Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
* Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A
FDMS4435BZ Applications
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
* HBM ESD protection level >7 kV typical (Note 4)
* 100% UIL tested
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