FDMS4D4N08C - N-Channel MOSFET

Product Overview

onsemi

Datasheet Details

Part number	FDMS4D4N08C
Manufacturer	onsemi
File Size	481.71 KB
Description	N-Channel MOSFET
Datasheet	FDMS4D4N08C Datasheet
Additional preview pages of the FDMS4D4N08C datasheet.

Product details

Description

This N Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized to minimise on state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 44 A.
Max rDS(on) = 10.4 mW at VGS = 6 V, ID = 22 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
MSL1 Robust Package Design.
100% UIL Tested.
RoHS Compliant Typical.

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Published: Apr 14, 2025 |