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FDMS039N08B N-Channel PowerTrench MOSFET

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Description

FDMS039N08B N-Channel PowerTrench® MOSFET September FDMS039N08B N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-st.

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Datasheet Specifications

Part number
FDMS039N08B
Manufacturer
Fairchild Semiconductor
File Size
706.75 KB
Datasheet
FDMS039N08B_FairchildSemiconductor.pdf
Description
N-Channel PowerTrench MOSFET

Features

* RDS(on) = 3.2mΩ (Typ. )@ VGS = 10V, ID = 50A
* Low FOM RDS(on)
* QG
* Low reverse recovery charge, Qrr
* Soft reverse recovery body diode
* Enables highly efficiency in synchronous rectification
* Fast Switching Speed
* 100% UIL Tested

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