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FDD6N50 - N-Channel MOSFET

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 900 mΩ (Max. ) @ VGS = 10 V, ID = 3 A.
  • Low Gate Charge (Typ. 12.8 nC).
  • Low Crss (Typ. 9 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
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