FDC699P Datasheet (Fairchild Semiconductor) - P-Channel 2.5V PowerTrench MOSFET

FDC699P, P-Channel 2.5V PowerTrench MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5V * 12V).

Applications * Battery management * Load Swit

FDC699P Features

* 7 A,

* 20 V RDS(ON) = 22 mΩ @ VGS =

* 4.5 V RDS(ON) = 30 mΩ @ VGS =

* 2.5 V

* High performance trench technology for extremely low RDS(ON)

* Fast switching speed

* FLMP SuperSOT-6 package: Enhanced thermal performance in industry-st