FDC699P - P-Channel 2.5V PowerTrench MOSFET

Fairchild Semiconductor

The FDC699P by Fairchild Semiconductor is a P-Channel 2.5V PowerTrench MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

FDC699P P-Channel 2.5V PowerTrench MOSFET by Fairchild Semiconductor - Datasheet Preview — Official preview page of the **FDC699P** P-Channel 2.5V PowerTrench MOSFET datasheet (Fairchild Semiconductor).

Datasheet Details

Part number	FDC699P
Manufacturer	Fairchild Semiconductor
File Size	159.49 KB
Description	P-Channel 2.5V PowerTrench MOSFET
Datasheet	FDC699P-FairchildSemiconductor.pdf
Additional preview pages of the FDC699P datasheet.

FDC699P Product details

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. 12V). Battery management Load Switch Battery protection

Features

7 A,.
20 V RDS(ON) = 22 mΩ @ VGS =.
4.5 V RDS(ON) = 30 mΩ @ VGS =.
2.5 V.
High performance trench technology for extremely low RDS(ON).
Fast switching speed.
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size G S S SuperSOT-6TM FLMP S S S 16 25 34 Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source V.

📁 FDC699P Similar Datasheet

FDC604P - P-Channel MOSFET (ON Semiconductor)
FDC606P - P-Channel MOSFET (ON Semiconductor)
FDC608PZ - P-Channel MOSFET (ON Semiconductor)
FDC608PZ-F171 - P-Channel MOSFET (ON Semiconductor)
FDC610PZ - P-Channel MOSFET (ON Semiconductor)
FDC6301N - Dual N-Channel Digital FET (ON Semiconductor)
FDC6302P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6303N - Dual N-Channel Digital FET (onsemi)

Other Datasheets by Fairchild Semiconductor

FDC6901L - Integrated Load Switch
FDC697P - P-Channel 1.8V PowerTrench MOSFET
FDC6000NZ - Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6020C - Complementary PowerTrench MOSFET
FDC602P - P-Channel MOSFET
FDC6036P - P-Channel 1.8V Specified PowerTrench MOSFET

Published: Jan 14, 2016 |