4N600 N-Channel MOSFET

Description

Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 4N600(3600) .
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited f.

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Datasheet Specifications

Part number: 4N600
Manufacturer: ETC
File Size: 36.81 KB
Datasheet: 4N600_ETC.pdf
Description: N-Channel MOSFET

Features

* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Orderin

Applications

* such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. A

4N600 Distributors

📁 Related Datasheet

4N60 4N60-C 4N60-CB 4N60-E 4N60-N 4N60-Q

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4N600 N-Channel MOSFET ETC

ETC 4N600-like datasheet