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CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C818L3 Issued Date : 2003.08.13 Revised Date : Page No. : 1/5
NPN Epitaxial Planar Transistor
BTN1053L3
Features
• 5W power dissipation • Excellent HFE Characteristics up to 1A • Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). • 5A peak pulse current
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Note : Single pulse, Pw≤300µs, Duty Cycle≤2%.
Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg
Limits 150 75 5 1.5 5 (Note) 5 150 -55~+150
Unit V V V A W °C °C
BTN1053L3
CYStek Product Specification
CYStech Electronics Corp.
www.DataSheet4U.
BTN1053L3 Datasheet
