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BTN3501F3 - Low Vcesat NPN Epitaxial Planar Transistor

Features

  • Symbol BTN3501F3 Outline TO-263 C B E B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD RθJA RθJC T.

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Datasheet Details

Part number BTN3501F3
Manufacturer Cystech Electonics Corp
File Size 219.68 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN3501F3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor www.DataSheet4U.com Issued Date : 2005.11.24 Revised Date : 2005.11.30 Page No. : 1/6 Spec. No. : C606F3 BTN3501F3 • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free package Features Symbol BTN3501F3 Outline TO-263 C B E B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
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