Datasheet4U Logo Datasheet4U.com

BTN3501E3 - High Speed Switching diode

Features

  • Symbol BTN3501E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj.

📥 Download Datasheet

Datasheet Details

Part number BTN3501E3
Manufacturer Cystech Electonics
File Size 200.36 KB
Description High Speed Switching diode
Datasheet download datasheet BTN3501E3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTN3501F3 Low Vcesat NPN Epitaxial Planar Transistor Cystech Electonics Corp
BTN1053A3 Low Vcesat NPN Epitaxial Planar Transistor CYStech
BTN1053I3 NPN Epitaxial Planar Transistor CYStech
BTN1053K3 NPN Epitaxial Planar Transistor CYStech
BTN1101E3 Low Vcesat NPN Epitaxial Planar Transistor CYStech

Other Datasheets by Cystech Electonics

Part Number Description
BTN3501I3 High Speed Switching diode
BTN3501J3 High Speed Switching diode
BTN3904A3 General Purpose NPN Epitaxial Planar Transistor
BTN3904N3 General Purpose NPN Epitaxial Planar Transistor
BTN3904S3 NPN Transistor

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 • Low VCE(sat) • High BVCEO • Excellent current gain characteristics Features Symbol BTN3501E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 80 6 10 20 (Note 1) 2 50 62.
Published: |