CY7C1916KV18, CY7C1316KV18 - 18-Mbit DDR II SRAM Two-Word Burst Architecture

Cypress Semiconductor

Datasheet Details

Part number	CY7C1916KV18, CY7C1316KV18
Manufacturer	Cypress Semiconductor
File Size	1.45 MB
Description	18-Mbit DDR II SRAM Two-Word Burst Architecture
Datasheet	CY7C1316KV18_CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1916KV18, CY7C1316KV18. Please refer to the document for exact specifications by model.

The CY7C1316KV18, CY7C1916KV18, CY7C1318KV18, and CY7C1320KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture.

Configurations CY7C1316KV18.
2 M × 8 CY7C1916KV18.
2 M × 9 CY7C1318KV18.
1 M × 18 CY7C1320KV18.
512 K × 36 18-Mbit density (2 M × 8, 2 M × 9, 1 M × 18, 512 K × 36) 333-MHz clock for high bandwidth Two-word burst for reducing address bus frequency Double data rate (DDR) interfaces  (data transferred at 666 MHz) at 333 MHz Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only Two input clocks for out.

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Published: Apr 15, 2011 |