CY7C1311BV18_CypressSemiconductor.pdf
Datasheet Details
Part number:
CY7C1911BV18, CY7C1311BV18
Manufacturer:
Cypress Semiconductor
File Size:
529.85 KB
Description:
(cy7c1x1xbv18) 18-mb qdrtm-ii sram 4-word burst architecture.
Note:
This datasheet PDF includes multiple part numbers: CY7C1911BV18, CY7C1311BV18.
Please refer to the document for exact specifications by model.
CY7C1911BV18, CY7C1311BV18, (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
The CY7C1311BV18, CY7C1911BV18, CY7C1313BV18, and CY7C1315BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture.
QDR-II architecture consists of two separate ports to access the memory array.
The Read port has dedicated Data Outputs to support Read operations and the Write po
CY7C1911BV18 Features
* Separate Independent Read and Write data ports
* Supports concurrent transactions
* 300-MHz clock for high bandwidth
* 4-Word Burst for reducing address bus frequency
* Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 600 M
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