CY7C1916BV18, CY7C1316BV18 - 18-Mbit DDR-II SRAM 2-Word Burst Architecture

Cypress Semiconductor

Datasheet Details

Part number	CY7C1916BV18, CY7C1316BV18
Manufacturer	Cypress Semiconductor
File Size	551.73 KB
Description	18-Mbit DDR-II SRAM 2-Word Burst Architecture
Datasheet	CY7C1316BV18_CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1916BV18, CY7C1316BV18. Please refer to the document for exact specifications by model.

The CY7C1316BV18, CY7C1916BV18, CY7C1318BV18, and CY7C1320BV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture.

18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36).
300-MHz clock for high bandwidth.
2-Word burst for reducing address bus frequency.
Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches.
Echo clocks (CQ and CQ) simplify data cap.

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Published: Apr 15, 2011 |