Datasheet Details
- Part number
- C3M0075120J
- Manufacturer
- CREE
- File Size
- 0.99 MB
- Datasheet
- C3M0075120J-CREE.pdf
- Description
- Silicon Carbide Power MOSFET
C3M0075120J Description
VDS 1200 V C3M0075120J ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 mΩ N-Channel Enhancement Mode .
C3M0075120J Features
* Package
* 3rd generation SiC MOSFET technology
* Low impedance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0075120J Applications
* TAB Drain
1 2 34 5 6 7 G KS S S S S S
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies
Part Number C3M0075120J
Package TO-263-7
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