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C3M0075120D - Silicon Carbide Power MOSFET

Key Features

  • C3MTM SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Ordering Part Number Package C3M0075120D TO 247-3 Marking C3M0075120D TJ , Tstg Range -55 - 150 ˚C Typical.

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C3M0075120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Ordering Part Number Package C3M0075120D TO 247-3 Marking C3M0075120D TJ , Tstg Range -55 - 150 ˚C Typical Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Key Parameters Parameter Drain - Source Voltage Maximum Gate - Source Voltage Operational Gate-Source Voltage DC Continu