C3M0075120D Silicon Carbide Power MOSFET

CREE

Description

VDS 1200 V C3M0075120D ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0075120D
Manufacturer: CREE
File Size: 815.22 KB
Datasheet: C3M0075120D-CREE.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* C3MTM SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher system ef

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Part Number C3M0075120D Package TO-247-3 Marking C3M0075120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value VDSmax VGSma

C3M0075120D Distributors

📁 Related Datasheet

C3M0075120D-A C3M0075120J2 C3M0075120K-A C3M0075120K1 C3M0015065D C3M0015065K

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C3M0075120D Silicon Carbide Power MOSFET CREE

CREE C3M0075120D-like datasheet