Description
The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.
Features
- VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 41mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM
D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ G2 1.6KΩ
D2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation
A
Maximum 20 ±12 6 4.8 30 1.5 0.94.
AO8830_AlphaOmegaSemiconductors.pdf
