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AO8808A 20V Dual N-Channel MOSFET

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Description

AO8808A 20V Dual N-Channel MOSFET General .
The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number
AO8808A
Manufacturer
Alpha & Omega Semiconductors
File Size
308.52 KB
Datasheet
AO8808A_AlphaOmegaSemiconductors.pdf
Description
20V Dual N-Channel MOSFET

Features

* VDS (V) = 20V ID = 7.9A (VGS = 10V) RDS(ON) < 14mW (VGS = 10V) RDS(ON) < 15mW (VGS = 4.5V) RDS(ON) < 20mW (VGS = 2.5V) RDS(ON) < 28mW (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherw

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER

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