AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Description

www.DataSheet4U.com AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO8808
Manufacturer: Alpha & Omega Semiconductors
File Size: 141.87 KB
Datasheet: AO8808_AlphaOmegaSemiconductors.pdf
Description: Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VD

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

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