AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

ALPHA

Description

July 2001 AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO8800
Manufacturer: ALPHA
File Size: 226.44 KB
Datasheet: AO8800_ALPHA.pdf
Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximu

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AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ALPHA

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