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AO8801A - P-Channel MOSFET

General Description

The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS ID (at VGS=-10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) -20V -4.5A < 42mΩ < 54mΩ < 68mΩ D1 D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 S2 C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±8 -4.5 -3.6 -30 1.5 0.96 -55 to 150 Units V V A VGS TA=25° C C TA=70° TA=25° C C TA=70° ID IDM PD.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
AO8801 Dual P-Channel FET
AO8800 Dual N-Channel FET
AO8802 Dual N-Channel FET
AO8803 P-Channel MOSFET
AO8804 Dual N-Channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO8801A 20V P-Channel MOSFET General Description The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS ID (at VGS=-10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) -20V -4.5A < 42mΩ < 54mΩ < 68mΩ D1 D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 S2 C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±8 -4.5 -3.6 -30 1.5 0.