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AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor

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Description

www.DataSheet4U.com AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General .
The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number
AO8803
Manufacturer
Alpha & Omega Semiconductors
File Size
147.73 KB
Datasheet
AO8803_AlphaOmegaSemiconductors.pdf
Description
Dual P-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VD

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