PED705 datasheet, mosfet equivalent, semi one

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Features and benefits

* VDS = -12V,ID = -8A RDS(ON) <30mΩ @ VGS=-4.5V RDS(ON) <40mΩ @ VGS=-2.5V RDS(ON) <60mΩ @ VGS=-1.8V G3 4S Pin 1 Pin Assignment DD G
*Asvanced trench MOSFET p.

Application

Bottom Drain Contact D1 6D D2 5D GENERAL FEATURES
* VDS = -12V,ID = -8A RDS(ON) <30mΩ @ VGS=-4.5V RDS(ON) <40m.

Description

The PED705 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications Bottom.

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