PED2310N datasheet, mosfet equivalent, semi one

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Features and benefits

* VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product i.

Application

It is ESD protested. General Features
* VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rat.

Description

The PED2310N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features .

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