PED2311DN mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 18V, ID = 12A RDS(ON) < 7.5mΩ @ VGS=4.5V
Schematic diagram
RDS(ON) < 8.6mΩ @ VGS=3.8V
RDS(ON) < 10mΩ @ VGS=3.1V
RDS(ON) < 11mΩ @ VGS=2.5V
ESD Rating: 400.
It is ESD protected.
PED2311DN
General Features
* VDS = 18V, ID = 12A RDS(ON) < 7.5mΩ @ VGS=4.5V
Schematic diagr.
The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED2311DN
General Features
* VDS = 18V, ID = 12A RDS(ON) < 7.5mΩ @ VGS=4.5V
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