PED2310N mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 18V, ID = 7A RDS(ON) < 16mΩ @ VGS=4.5V
Schematic diagram
RDS(ON) < 17mΩ @ VGS=4.2V
RDS(ON) < 18mΩ @ VGS=3.8V
RDS(ON) < 24mΩ @ VGS=2.5V
ESD Rating: 4000V .
It is ESD protected.
PED2310N
General Features
* VDS = 18V, ID = 7A RDS(ON) < 16mΩ @ VGS=4.5V
Schematic diagram
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The PED2310N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED2310N
General Features
* VDS = 18V, ID = 7A RDS(ON) < 16mΩ @ VGS=4.5V
Sche.
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