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PED2311N Datasheet, semi one

PED2311N mosfet equivalent, n-channel enhancement mode power mosfet.

PED2311N Avg. rating / M : 1.0 rating-13

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PED2311N Datasheet

Features and benefits


* VDS = 20V,ID =12 A RDS(ON) = 8.0mΩ@ VGS=4.5V RDS(ON) = 10.0mΩ@ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free produc.

Application

It is ESD protested. General Features
* VDS = 20V,ID =12 A RDS(ON) = 8.0mΩ@ VGS=4.5V RDS(ON) = 10.0mΩ@ VGS=2.5V ESD.

Description

The PED2311N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features.

Image gallery

PED2311N Page 1 PED2311N Page 2 PED2311N Page 3

TAGS

PED2311N
N-Channel
Enhancement
Mode
Power
MOSFET
PED2311DN
PED2310F
PED2310L
semi one

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