Datasheet4U Logo Datasheet4U.com

PED2310L - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2310L uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

  • VDS = 18V, ID = 8A RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 19mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=2.5V ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

📥 Download Datasheet

Datasheet preview – PED2310L

Datasheet Details

Part number PED2310L
Manufacturer ChipSourceTek
File Size 831.73 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2310L Datasheet
Additional preview pages of the PED2310L datasheet.

📁 Similar Datasheet

  • PED2310L - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2310F - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2310N - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2311DN - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2311N - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2312 - Dual P & N-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2312A - Dual N & P-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2313N - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2023 - P-Channel Enhancement Mode Power MOSFET (semi one)
  • PED2510L - N-Channel Enhancement Mode Power MOSFET (semi one)
Other Datasheets by ChipSourceTek
  • PED2310N - N-Channel Enhancement Mode Power MOSFET
  • PED2311DN - N-Channel Enhancement Mode Power MOSFET
  • PED2015M - P-Channel Enhancement Mode Power MOSFET
  • PED20D09M - P-Channel Enhancement Mode Power MOSFET
  • PED2420 - N-Channel Enhancement Mode Power MOSFET
  • PED3008MA - P-Channel Enhancement Mode Power MOSFET
  • PED30D12M - N-Channel Enhancement Mode Power MOSFET
  • PED30P09M - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel Enhancement Mode Power MOSFET Description The PED2310L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PED2310L General Features ● VDS = 18V, ID = 8A RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 19mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=2.
Published: |