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PED30P09M - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -30V, ID = -9A RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – PED30P09M

Datasheet Details

Part number PED30P09M
Manufacturer ChipSourceTek
File Size 1.08 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED30P09M Datasheet
Additional preview pages of the PED30P09M datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PED30P09M General Features ● VDS = -30V, ID = -9A RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking rceTe PDFN3.3x3.
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