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PED305 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -16V,ID = -3.5A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON).

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Datasheet preview – PED305

Datasheet Details

Part number PED305
Manufacturer semi one
File Size 1.16 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED305 Datasheet
Additional preview pages of the PED305 datasheet.

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Full PDF Text Transcription

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PED305 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Bottom Drain Contact D1 6D D2 5D GENERAL FEATURES ● VDS = -16V,ID = -3.5A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) <75mΩ @ VGS=-2.
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