PED20D09M mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -18V, ID = -9A
RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 30mΩ @ VGS=-2.5V
Schematic diagram
* High Power and current handing capabi.
General Features
* VDS = -18V, ID = -9A
RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 30mΩ @ VGS=.
The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = -18V, ID = -9A
RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON.
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