PED2015M mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V, ID = -40A
RDS(ON) < 11mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-2.5V
Schematic diagram
* High Power and current handing capability
* Lead free pro.
PED2015M
General Features
* VDS = -20V, ID = -40A
RDS(ON) < 11mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-2.5V
Schemati.
The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PED2015M
General Features
* VDS = -20V, ID = -40A
RDS(ON) < 11mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-.
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