PED505 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -12V,ID = -5.0A RDS(ON) < 52mΩ @ VGS=-4.5V RDS(ON) <70mΩ @ VGS=-2.5V
* High Power and current handing capability
* Lead free product is acquired
*.
Bottom Drain Contact
D1
6D
D2
5D
GENERAL FEATURES
* VDS = -12V,ID = -5.0A RDS(ON) < 52mΩ @ VGS=-4.5V RDS(ON) .
The PED505 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Bottom Drain Contact
D1
6D
D2
5D
.
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