PED55P5 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellen.
General Features
* VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
* High density cell design for ultra low Rdson <.
The PED55P5 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
* High density cell des.
Image gallery
TAGS
Download (Size : 518.87KB)