GAN7R0-150LBE datasheet, fet equivalent, nexperia

Features and benefits

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

Application

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Land Grid A.

Description

The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits
* Enhancement mode - normally-off power s.

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