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GAN3R2-100CBE Datasheet, nexperia

GAN3R2-100CBE fet equivalent, gan fet.

GAN3R2-100CBE Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 286.48KB)

GAN3R2-100CBE Datasheet

Features and benefits


* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

Application


* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level.

Description

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance. 2. Features and benefits
* Enhancement mode -.

Image gallery

GAN3R2-100CBE Page 1 GAN3R2-100CBE Page 2 GAN3R2-100CBE Page 3

TAGS

GAN3R2-100CBE
GaN
FET
nexperia

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