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GAN080-650EBE Datasheet, nexperia

GAN080-650EBE fet equivalent, gan fet.

GAN080-650EBE Avg. rating / M : 1.0 rating-11

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GAN080-650EBE Datasheet

Features and benefits


* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

Application


* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Low package.

Description

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits
* Enhancement mode - normally-of.

Image gallery

GAN080-650EBE Page 1 GAN080-650EBE Page 2 GAN080-650EBE Page 3

TAGS

GAN080-650EBE
GaN
FET
GAN039-650NBB
GAN039-650NBBA
GAN039-650NTB
nexperia

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