GAN080-650EBE Datasheet, nexperia

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Low package.

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits
* Enhancement mode - normally-of.