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GAN039-650NTB Datasheet, nexperia

GAN039-650NTB fet equivalent, gallium nitride (gan) fet.

GAN039-650NTB Avg. rating / M : 1.0 rating-12

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GAN039-650NTB Datasheet

Features and benefits


* Simplified driver design as standard level MOSFET gate drivers can be used:
* 0 V to 12 V drive voltage
* Gate threshold voltage VGSth of 4 V
* Robust g.

Application


* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UP.

Description

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering sup.

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TAGS

GAN039-650NTB
Gallium
Nitride
GaN
FET
GAN039-650NBB
GAN039-650NBBA
GAN041-650WSB
nexperia

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