GAN111-650WSB datasheet, fet equivalent, nexperia

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Features and benefits

* Ultra-low reverse recovery charge
* Simple gate drive (0 V to +10 V or +12 V)
* Robust gate oxide (±20 V capability)
* High gate threshold voltage (+4 V.

Application

* Hard and soft switching converters for industrial and datacom power
* AC/DC Bridgeless totem-pole PFC
* DC.

Description

The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliabi.

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