GAN041-650WSB fet equivalent, gan fet.
* Ultra-low reverse recovery charge
* Simple gate drive (0 V to +10 V or 12 V)
* Robust gate oxide (±20 V capability)
* High gate threshold voltage (+4 V).
* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UP.
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliabi.
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