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GAN041-650WSB Datasheet, nexperia

GAN041-650WSB fet equivalent, gan fet.

GAN041-650WSB Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 310.87KB)

GAN041-650WSB Datasheet

Features and benefits


* Ultra-low reverse recovery charge
* Simple gate drive (0 V to +10 V or 12 V)
* Robust gate oxide (±20 V capability)
* High gate threshold voltage (+4 V).

Application


* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UP.

Description

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliabi.

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TAGS

GAN041-650WSB
GaN
FET
nexperia

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