logo

GAN140-650EBE Datasheet, nexperia

GAN140-650EBE fet equivalent, gan fet.

GAN140-650EBE Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 314.95KB)

GAN140-650EBE Datasheet
GAN140-650EBE
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 314.95KB)

GAN140-650EBE Datasheet

Features and benefits


* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

Application


* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Low package.

Description

The GAN140-650EBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits
* Enhancement mode - normally-o.

Image gallery

GAN140-650EBE Page 1 GAN140-650EBE Page 2 GAN140-650EBE Page 3

TAGS

GAN140-650EBE
GaN
FET
nexperia

Manufacturer


nexperia (https://www.nexperia.com/)

Related datasheet

GAN140-650FBE

GAN111-650WSB

GAN190-650EBE

GAN190-650FBE

GAN039-650NBB

GAN039-650NBBA

GAN039-650NTB

GAN041-650WSB

GAN063-650WSA

GAN080-650EBE

GAN3R2-100CBE

GAN7R0-150LBE

GANB4R8-040CBA

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts