GAN140-650EBE datasheet, fet equivalent, nexperia

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datasheet Download (Size : 314.95KB)

Features and benefits

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

Application

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Low package.

Description

The GAN140-650EBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits
* Enhancement mode - normally-o.

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