GAN190-650FBE fet equivalent, gan fet.
* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.
* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Low package.
The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.
2. Features and benefits
* Enhancement mode - normally-o.
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