GAN190-650FBE Datasheet, nexperia

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Low package.

The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits
* Enhancement mode - normally-o.