GAN063-650WSA datasheet, fet equivalent, nexperia

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Features and benefits

* Ultra-low reverse recovery charge
* Simple gate drive (0 V to +10 V or 12 V)
* Robust gate oxide (±20 V capability)
* High gate threshold voltage (+4 V).

Application

* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UP.

Description

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2.

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